Erasing characteristics of Cu2O metal-insulator-metal resistive switching memory

被引：77

作者：

Chen, A. ^{[1
]}

Haddad, S. ^{[1
]}

Wu, Y. C. ^{[1
]}

Fang, T. N. ^{[1
]}

Kaza, S. ^{[1
]}

Lan, Z. ^{[1
]}

机构：

[1] Adv Mem Dev Grp, Sunnyvale, CA 94088 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期

关键词：

D O I：

10.1063/1.2828864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The erasing characteristics of Cu(2)O metal-insulator-metal resistive switching memory were measured on a 64 Kb memory test array. The erasing yield reaches the maximum at an optimal erasing voltage. Effective erasing requires a threshold current compliance that is higher for shorter pulse width. The erasing current and erasing power both depend strongly on the on-state before erasing, while the erasing voltage is essentially unaffected. Erasing appears to be a power-driven process, which may be related to the thermal effect of power dissipation. The experimental data and analysis suggest that erasing can be explained by field-assisted thermal emission of trapped charges. (c) 2008 American Institute of Physics.

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