Europium-doped sesquioxide thin films grown on sapphire by PLD

被引:17
作者
Bär, S
Huber, G
Gonzalo, J
Perea, A
Climent, A
Paszti, F
机构
[1] Univ Hamburg, Inst Laser Phys, D-22761 Hamburg, Germany
[2] CSIC, Inst Opt, E-28006 Madrid, Spain
[3] Univ Autonoma Madrid, Dept Fis Aplicada C12, E-28049 Madrid, Spain
[4] Univ Autonoma Madrid, CMAM, E-28049 Madrid, Spain
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 105卷 / 1-3期
关键词
Y2O3 thin films; pulsed laser deposition; XRD; RBS; europium;
D O I
10.1016/j.mseb.2003.08.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper focuses on the preparation and characterization of crystalline thin films of rare-earth-doped sesquioxides (Y2O3, Lu2O3,and Sc2O3) grown by pulsed laser deposition (PLD) on single-crystal (0001) sapphire substrates. X-ray diffraction (XRD) measurements show that the films with thicknesses between 1 and 500 nm were highly textured along the [1 1 1] direction. Using Rutherford backscattering (RBS) analysis the correct stoichiometric composition of the films could be proved. The emission and excitation spectra of the europium-doped films down to a thickness of 100 nm look similar to those of the corresponding crystalline bulk material, whereas films with 20 nm thickness and below show a completely different emission behavior. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:30 / 33
页数:4
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