Morphology of thin silver film grown by dc sputtering on Si(001)

被引：86

作者：

Kundu, S

Hazra, S

Banerjee, S

Sanyal, MK

Mandal, SK

Chaudhuri, S

Pal, AK

机构：

[1] Saha Inst Nucl Phys, Surface Phys Div, Calcutta 700064, W Bengal, India

[2] Indian Assoc Cultivat Sci, Dept Mat Sci, Calcutta 700032, W Bengal, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1998年 / 31卷 / 23期

关键词：

D O I：

10.1088/0022-3727/31/23/001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The morphology and growth mechanism of silver films approximately 150 Angstrom in thickness on Si(001) substrates have been studied by atomic force microscopy and x-ray reflectivity. The thin films prepared by do sputtering at room temperature are composed of islands of silver. The shape and size distribution of these islands are studied using these two complementary measurement techniques.

引用

页码：L73 / L77

页数：5

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