High-performance GaN-based light-emitting diode using high-transparency Ni/Au/Al-doped ZnO composite contacts

被引：26

作者：

Jung, SP ^{[1
]}

Ullery, D

Lin, CH

Lee, HP

Lim, JH

Hwang, DK

Kim, JY

Yang, EJ

Park, SJ

机构：

[1] Univ Calif Irvine, Henry Samueli Sch Engn, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 18期

关键词：

D O I：

10.1063/1.2120913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a high-transparency low-resistance composite contact structure on p-GaN for light-emitting diode applications. The structure consists of a thin Ni (5 nm)/Au (5 nm) layer overcoated with a sputtered Al-doped ZnO (170 nm) layer. Enhancement in light emission intensity as high as 74% at 40 mA and forward operating voltages in the range of 3.36-3.48 V at 20 mA are obtained for these devices using a two-step thermal annealing process. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 15 条

[1] Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact [J].

Chang, SJ ;

Chang, CS ;

Su, YK ;

Chuang, RW ;

Lai, WC ;

Kuo, CH ;

Hsu, YP ;

Lin, YC ;

Shei, SC ;

Lo, HM ;

Ke, JC ;

Sheu, JK .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (04) :1002-1004

[2] Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN [J].

Chen, LC ;

Chen, FR ;

Kai, JJ ;

Chang, L ;

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Chen, CY ;

Shih, KK .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :3826-3832

[3] Low-resistance ohmic contacts to p-type GaN [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Chen, CY ;

Shih, KK .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1275-1277

[4] Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Shih, KK ;

Chen, LC ;

Chen, FR ;

Kai, JJ .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4491-4497

[5] Argon gas pressure dependence of the properties of transparent conducting ZnO:Al films deposited on glass substrates [J].

Igasaki, Y ;

Kanma, H .

APPLIED SURFACE SCIENCE, 2001, 169 :508-511

[6] High transparency low resistance oxidized Ni/Au-ZnO contacts to p-GaN for high performance LED applications [J].

Jung, SP ;

Lin, CH ;

Chan, HM ;

Fan, ZY ;

Lu, JG ;

Lee, HP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2004, 201 (12) :2827-2830

[7]

KAMINSKA E, 2001, MATER RES SOC S P, V693, P1

[8] Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes [J].

Kim, H ;

Kim, DJ ;

Park, SJ ;

Hwang, H .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1506-1508

[9] Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to p-type GaN [J].

Lim, JH ;

Hwang, DK ;

Kim, HS ;

Oh, JY ;

Yang, JH ;

Navamathavan, R ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2004, 85 (25) :6191-6193

[10]

Lin CH, 2001, MATER RES SOC S P, V639, P481

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