Argon gas pressure dependence of the properties of transparent conducting ZnO:Al films deposited on glass substrates

被引:104
作者
Igasaki, Y [1 ]
Kanma, H [1 ]
机构
[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
关键词
transparent conducting oxide film; transparent electrode; zinc oxide film; aluminum-doped zinc oxide film; sputtering; rf magnetron sputtering;
D O I
10.1016/S0169-4332(00)00748-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Aluminium doped zinc oxide (ZnO:AI) films were deposited on amorphous substrates heated up to 200 degreesC with a radio frequency (rf) power of 100 W by rf magnetron sputtering from a ZnO target mixed with Al2O3 Of 2 Wt.%. Argon gas pressure during deposition was in the range 0.08-2.7 Pa. As argon gas pressure was increased, the deposition rate and the grain size were decreased and the surface roughness was increased. Furthermore, the carrier concentration and the Hall mobility were decreased and thus the electrical resistivity was increased. However, the optical transmittance of about 90% was maintained over the argon pressure range. The resistivity of the film deposited at argon gas pressure of 0.13 Pa was about 2.5 x 10(-4)Ohm cm, a value comparable to that for indium tin oxide film presently used as a transparent electrode. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
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页码:508 / 511
页数:4
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