Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes

被引：40

作者：

Kim, H ^{[1
]}

Kim, DJ ^{[1
]}

Park, SJ ^{[1
]}

Hwang, H ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 02期

关键词：

D O I：

10.1063/1.1334631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Feasibility of an oxidized Ni/Au p contact on some aspects of device applications for a GaN/InGaN multiple quantum well light-emitting diode (LED) was investigated. For the oxidation of Ni/Au p contact, furnace annealing of a completely fabricated LED was performed at 600 degreesC for 5 min in an O-2 ambient. For the case of LED with an oxidized Ni/Au system, the I-V measurements showed a reduction in series resistance of the diode by 17.2%. In addition, the optical output power of the oxidized LED was increased by a factor of 2. However, a significant degradation in reliability characteristics was observed, which might detract from the direct application of the Ni/Au oxidation process. We also conclude that the improvement of oxidized Ni/Au contact properties is mainly due to the formation of an intermediate NiO layer, rather than an enhancement in p-type activation. (C) 2001 American Institute of Physics.

引用

页码：1506 / 1508

页数：3

共 12 条

[1] Low-resistance ohmic contacts to p-type GaN [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Chen, CY ;

Shih, KK .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1275-1277

[2] Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Shih, KK ;

Chen, LC ;

Chen, FR ;

Kai, JJ .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4491-4497

[3] InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN [J].

Huh, C ;

Kim, HS ;

Kim, SW ;

Lee, JM ;

Kim, DJ ;

Lee, IH ;

Park, SJ .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4464-4466

[4] Influence of oxygen on the activation of p-type GaN [J].

Hull, BA ;

Mohney, SE ;

Venugopalan, HS ;

Ramer, JC .

APPLIED PHYSICS LETTERS, 2000, 76 (16) :2271-2273

[5] Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN [J].

Koide, Y ;

Maeda, T ;

Kawakami, T ;

Fujita, S ;

Uemura, T ;

Shibata, N ;

Murakami, M .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) :341-346

[6] LOW-RESISTANCE OHMIC CONTACTS ON WIDE BAND-GAP GAN [J].

LIN, ME ;

MA, Z ;

HUANG, FY ;

FAN, ZF ;

ALLEN, LH ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1994, 64 (08) :1003-1005

[7] Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN [J].

Maeda, T ;

Koide, Y ;

Murakami, M .

APPLIED PHYSICS LETTERS, 1999, 75 (26) :4145-4147

[8] Indium tin oxide contacts to gallium nitride optoelectronic devices [J].

Margalith, T ;

Buchinsky, O ;

Cohen, DA ;

Abare, AC ;

Hansen, M ;

DenBaars, SP ;

Coldren, LA .

APPLIED PHYSICS LETTERS, 1999, 74 (26) :3930-3932

[9] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[10]

Nakamura S., 1997, BLUE LASER DIODE GAN

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