InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN

被引：36

作者：

Huh, C

Kim, HS

Kim, SW

Lee, JM

Kim, DJ

Lee, IH

Park, SJ ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Kwangju Inst Sci & Technol, Ctr Optoelect Mat Res, Kwangju 500712, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.373092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and 9.12x10(-3) Omega cm(2), demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency. (C) 2000 American Institute of Physics. [S0021-8979(00)05107-0].

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页码：4464 / 4466

页数：3

相关论文

共 16 条

[1] High performance AlGaN/GaN HEMT with improved ohmic contacts [J].

Cai, SJ ;

Li, R ;

Chen, YL ;

Wong, L ;

Wu, WG ;

Thomas, SG ;

Wang, KL .

ELECTRONICS LETTERS, 1998, 34 (24) :2354-2356

[2] Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates [J].

Egawa, T ;

Jimbo, T ;

Umeno, M .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) :5816-5821

[3] AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs) [J].

Fan, ZF ;

Lu, CZ ;

Botchkarev, AE ;

Tang, H ;

Salvador, A ;

Aktas, O ;

Kim, W ;

Morkoc, H .

ELECTRONICS LETTERS, 1997, 33 (09) :814-815

[4] Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors [J].

Gaska, R ;

Yang, JW ;

Osinsky, A ;

Bykhovski, AD ;

Shur, MS .

APPLIED PHYSICS LETTERS, 1997, 71 (25) :3673-3675

[5] Multicolored light emitters on silicon substrates [J].

Guha, S ;

Bojarczuk, NA .

APPLIED PHYSICS LETTERS, 1998, 73 (11) :1487-1489

[6] Low-resistance ohmic contacts to p-type GaN [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Chen, CY ;

Shih, KK .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1275-1277

[7] Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN [J].

Jang, JS ;

Chang, IS ;

Kim, HK ;

Seong, TY ;

Lee, SH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 1999, 74 (01) :70-72

[8] Indium tin oxide contacts to gallium nitride optoelectronic devices [J].

Margalith, T ;

Buchinsky, O ;

Cohen, DA ;

Abare, AC ;

Hansen, M ;

DenBaars, SP ;

Coldren, LA .

APPLIED PHYSICS LETTERS, 1999, 74 (26) :3930-3932

[9] InxGa1-xN/AlyGa1-yN violet light emitting diodes with reflective p-contacts for high single sided light extraction [J].

Mensz, PM ;

Kellawon, P ;

van Roijen, R ;

Kozodoy, P ;

Denbaars, S .

ELECTRONICS LETTERS, 1997, 33 (24) :2066-2068

[10] Schottky barriers and contact resistances on p-type GaN [J].

Mori, T ;

Kozawa, T ;

Ohwaki, T ;

Taga, Y ;

Nagai, S ;

Yamasaki, S ;

Asami, S ;

Shibata, N ;

Koike, M .

APPLIED PHYSICS LETTERS, 1996, 69 (23) :3537-3539