The evolution of hydrogen molecule formation in hydrogen-plasma-treated Czochralski silicon

被引：19

作者：

Job, R ^{[1
]}

Ulyashin, AG ^{[1
]}

Fahrner, WR ^{[1
]}

机构：

[1] Fern Univ Hagen, Dept Elect Engn LGBE, D-58084 Hagen, Germany

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期

关键词：

silicon; hydrogen molecules; platelets; plasma treatment; annealing;

D O I：

10.1016/S1369-8001(00)00136-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation of H-2 molecules in voids/platelets and their evolution upon annealing were studied. Standard p- and n-type Czochralski (Cz) silicon wafers have been treated by a hydrogen plasma at 250 degreesC. After the plasma hydrogenation the samples were annealed at temperatures up to 600 degreesC in air. Investigations were done by Raman spectroscopy. H-2 did appear as nearly free molecules in the platelets/voids (Raman shift similar to 4150 cm(-1)), but not on the tetrahedral interstitial position in the Si lattice. The normalized Raman intensities of the H-2 vibration modes exhibited significant sensitivity to the annealing temperature for both p- and n-type Ct Si. These peculiarities can be explained by the evolution of the platelets during annealing. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：257 / 260

页数：4

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