A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure

被引：8

作者：

Chen, Tzu-Pin ^{[1
]}

Cheng, Shiou-Ying ^{[2
]}

Hung, Ching-Wen ^{[1
]}

Chu, Kuei-Yi ^{[1
]}

Chen, Li-Yang ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Nation Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期

关键词：

breakdown; electron blocking; potential spike; step-graded collector;

D O I：

10.1109/LED.2007.911286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (I-C = 10(-12) A to I-C = 10(-1) A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency f(T) = 72.7 GHz and the maximum oscillation frequency f(max) = 50 GHz are achieved for a nonoptimized device (A(E) = 6 x 6 mu m(2)).

引用

页码：11 / 14

页数：4

共 22 条

[1] dc characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT) [J].

Chen, CY ;

Cheng, SY ;

Chiou, WH ;

Chuang, HM ;

Liu, RC ;

Yen, CH ;

Chen, JY ;

Cheng, CC ;

Liu, WC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (04) :874-879

[2] Freeway traffic stream modeling based on principal curves and its analysis [J].

Chen, DW ;

Zhang, JP ;

Tang, SM ;

Wang, J .

IEEE TRANSACTIONS ON INTELLIGENT TRANSPORTATION SYSTEMS, 2004, 5 (04) :246-258

[3] Temperature-dependent dc characteristics of an InGaAs/InGaAsP heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure [J].

Chen, JY ;

Chen, CY ;

Lee, KM ;

Yen, CH ;

Tsai, SF ;

Cheng, SY ;

Liu, WC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06) :2727-2733

[4]

Cheng Hong-Jie, 2001, Chinese Journal of Biotechnology, V17, P7

[5] Wideband DHBTs using a graded carbon-doped InGaAS base [J].

Dahlström, M ;

Fang, XM ;

Lubyshev, D ;

Urteaga, M ;

Krishnan, S ;

Parthasarathy, N ;

Kim, YM ;

Wu, Y ;

Fastenau, JM ;

Liu, WK ;

Rodwell, MJW .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) :433-435

[6] INGAAS INP COMPOSITE COLLECTOR HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

FEYGENSON, A ;

RITTER, D ;

HAMM, RA ;

SMITH, PR ;

MONTGOMERY, RK ;

YADVISH, RD ;

TEMKIN, H ;

PANISH, MB .

ELECTRONICS LETTERS, 1992, 28 (07) :607-609

[7] Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fτ [J].

Griffith, Zach ;

Lind, Erik ;

Rodwell, Mark J. W. .

2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, :403-406

[8] 37-GHz bandwidth monolithically integrated InPHBT/evanescently coupled photodiode [J].

Huang, Wei-kuo ;

Huang, Shou-chian ;

Chung, Hsiao-wen ;

Hsin, Yue-ming ;

Shi, Jin-wei ;

Kao, Yung-chung ;

Kuo, Jerm-ming .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) :1323-1325

[9] Over 300 GHz fT and fmax InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base [J].

Ida, M ;

Kurishima, K ;

Watanabe, N .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (12) :694-696

[10] InP/InGaAs/InP Double Heterojunction Bipolar Transistors with 300 GHz Fmax [J].

Krishnan, S ;

Dahlstrom, M ;

Mathew, T ;

Wei, Y ;

Scott, D ;

Urteaga, M ;

Rodwell, MJW ;

Liu, WK ;

Lubyshev, D ;

Fang, XM ;

Wu, Y .

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, :31-34

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