Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices

被引：12

作者：

Ledentsov, NN

Tsatsul'nikov, AF

Egorov, AY

Kop'ev, PS

Kovsh, AR

Maximov, MV

Ustinov, VM

Volovik, BV

Zhukov, AE

Alferov, AI

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.123281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the optical properties of structures composed of stacked InAs submonolayer insertions in an AlGaAs matrix grown on a GaAs(100) surface. The increased refractive index in the active region necessary for waveguiding is caused by the absorption peak due to excitons trapped by monolayer-height InAs islands. Despite a very low average InAs concentration, a thin AlGaAs buffer layer and an absorbing GaAs substrate photopumped lasing in the visible spectral range is already realized at low excitation density. (C) 1999 American Institute of Physics. [S0003-6951(99)00902-X].

引用

页码：161 / 163

页数：3

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