Highly efficient unibond silicon-on-insulator blazed grating couplers

被引：28

作者：

Ang, TW ^{[1
]}

Reed, GT

Vonsovici, A

Evans, AGR

Routley, PR

Josey, MR

机构：

[1] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England

[2] Univ Southampton, Dept Elect & Comp Sci, Highfield SO17 1BJ, England

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 25期

关键词：

D O I：

10.1063/1.1334910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report, design and fabrication of good asymmetrical Si-blazed gratings with a pitch of 383 nm, fabricated in unibond silicon-on-insulator using angled ion-beam etching. An output efficiency of 84% was achieved. The devices allow efficient coupling to/from small waveguides, of the order of 1 mum in height. (C) 2000 American Institute of Physics. [S0003-6951(00)04052-3].

引用

页码：4214 / 4216

页数：3

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