Highly ordered US nanoparticle arrays on silicon substrates and photoluminescence properties

被引：66

作者：

Lei, Y ^{[1
]}

Chim, WK

Sun, HP

Wilde, G

机构：

[1] Forschungszentrum Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany

[2] Singapore MIT Alliance, Singapore 117576, Singapore

[3] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[4] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 10期

关键词：

D O I：

10.1063/1.1869545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly ordered cadmium sulphide (CdS) nanoparticle (NP) arrays were fabricated on silicon (Si) substrates using ultrathin alumina membranes as evaporation masks. The US NPs are polycrystalline and are composed of ultrasmall closely packed nanocrystallites. These crystallites increase in size as the duration of the US evaporation process increases. When the thickness of the NPs changes from about 10 to 50 nm, the size of the crystallites increases from about 5-14 to 20-40 nm. Photoluminescence measurements on the US NP arrays show a strong emission spectrum with two subbands that are attributed to band-edge and surface-defect emissions. The peak position and width of the band-edge emission band are closely related to the size of the crystallites in the US NPs. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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