Fabrication of Pb(Zr,Ti)O3 films on epitaxial γ-Al2O3(001)/Si(001) substrates

被引：20

作者：

Akai, D ^{[1
]}

Sawada, K ^{[1
]}

Ishida, M ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Tenpaku Cho, Toyohashi, Aichi 4418580, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 259卷 / 1-2期

关键词：

sol-gel; epitaxial Al2O3; perovskite; Pb(Zr; Ti)O-3; ferroelectric materials;

D O I：

10.1016/S0022-0248(03)01587-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Pb(Zr,Ti)O-3 (PZT) films with (0 0 1) orientation were grown on epitaxial-Al2O3(0 0 1)/Si(0 0 1) substrates. The crystalline Al2O3 thin film was used as an insulating layer to fabricate metal-ferroelectric-insulator-semiconductor structures. The epitaxial-Al2O3(0 0 1) buffer layer was grown on Si(0 0 1) substrates at 1000degreesC using ultrahigh-vacuum chemical vapor deposition. The PZT films were grown on the Al2O3(0 0 1)/Si(0 0 1) substrates using a sol-gel method. Cracks on the surface of the PZT film were not observed with epitaxial-Al2O3(0 0 1) films greater than 30 nm thick. X-ray diffraction peaks associated with a perovskite structure were observed, indicating strongly (0 0 1) oriented patterns on the epitaxial-Al2O3(0 0 1)/Si(0 0 1) substrate. It was also found from results of Auger electron spectroscopy depth profiles that epitaxial-Al2O3(0 0 1) films prevent any reaction between Si and the PZT. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：90 / 94

页数：5

共 13 条

[1]

Davis L. E, 1976, HDB AUGER ELECT SPEC

[2] MFS FET - NEW TYPE OF NON-VOLATILE MEMORY SWITCH USING PLZT FILM [J].

HIGUMA, Y ;

MATSUI, Y ;

OKUYAMA, M ;

NAKAGAWA, T ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :209-214

[3] CHARACTERIZATION OF METAL FERROELECTRIC INSULATOR SEMICONDUCTOR STRUCTURE WITH CEO2 BUFFER LAYER [J].

HIRAI, T ;

TERAMOTO, K ;

NAGASHIMA, K ;

KOIKE, H ;

TARUI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A) :4163-4166

[4] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

ISHIDA, M ;

KATAKABE, I ;

NAKAMURA, T ;

OHTAKE, N .

APPLIED PHYSICS LETTERS, 1988, 52 (16) :1326-1328

[5] Fabrication of the Si/Al2O3/SiO2/Si structure using O2 annealed Al2O3/Si structure [J].

Ishida, M ;

Hori, H ;

Kondo, F ;

Akai, D ;

Sawada, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B) :2078-2082

[6] Development of surface morphology of epitaxial Al2O3 on silicon by controlling reaction between oxygen and silicon surface [J].

Kimura, T ;

Ishida, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2A) :853-856

[7] PROCESS INTEGRATION OF THE FERROELECTRIC MEMORY FETS (FEMFETS) FOR NDRO FERRAM [J].

LAMPE, DR ;

ADAMS, DA ;

AUSTIN, M ;

POLINSKY, M ;

DZIMIANSKI, J ;

SINHAROY, S ;

BUHAY, H ;

BRABANT, P ;

LIU, YM .

FERROELECTRICS, 1992, 133 (1-4) :61-72

[8] Fabrication and electrical characterization of ultrathin crystalline Al2O3 gate dielectric films on Si(100) and Si(111) by molecular beam epitaxy [J].

Shahjahan, M ;

Takahashi, N ;

Sawada, K ;

Ishida, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (12B) :L1474-L1477

[9] INTERACTION OF PBTIO3 FILMS WITH SI SUBSTRATE [J].

SHICHI, Y ;

TANIMOTO, S ;

GOTO, T ;

KUROIWA, K ;

TARUI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5172-5177

[10] FERROELECTRIC FIELD-EFFECT MEMORY DEVICE USING BI4TI3O12 FILM [J].

SUGIBUCHI, K ;

KUROGI, Y ;

ENDO, N .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2877-2881

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