Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

被引：183

作者：

Tachibana, K ^{[1
]}

Someya, T ^{[1
]}

Arakawa, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.123078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully grown nanometer-scale InGaN self-assembled quantum dots (QDs) on a GaN surface without any surfactants, using atmospheric-pressure metalorganic chemical vapor deposition. Atomic force microscopy shows that the average diameter of InGaN QDs is as small as 8.4 nm. Next, we have investigated the dependence of the QDs properties on the growth conditions: the amount of InGaN deposited and the growth temperature. Moreover, we have investigated the optical property of InGaN QDs, so that the strong emission was seen at 2.86 eV at room temperature. (C) 1999 American Institute of Physics. [S0003-6951(99)04703- 8].

引用

页码：383 / 385

页数：3

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