Shape evolution of oxidized silicon V-grooves during high dose ion implantation

被引：4

作者：

Müller, T ^{[1
]}

Heinig, KH ^{[1
]}

Schmidt, B ^{[1
]}

机构：

[1] Res Ctr Rossendorf, Inst Ion Beam Phys & Mat Res, D-01217 Dresden, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 178卷

关键词：

surface evolution; sputtering; re-deposition; ion induced surface modification; ion beam synthesis;

D O I：

10.1016/S0168-583X(00)00469-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The evolution of the shape of oxidized V-grooves on (0 0 1) Si under high-dose Get ion irradiation has been studied experimentally as well as theoretically. The V-grooves were formed by anisotropic etching and dry oxidation. A novel model of the surface evolution was developed including sputtering. re-deposition and swelling. The analytical equation was solved numerically for the V-groove geometry resulting in good agreement with cross-sectional TEM pictures. It is shown that sputtered material accumulates at the bottom of the V-grooves. This suggests also an accumulation of the implanted species, which can result in the formation of a very thin Ge-wire during subsequent annealing. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：109 / 114

页数：6

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