Shape evolution of oxidized silicon V-grooves during high dose ion implantation

被引：4

作者：

Müller, T ^{[1
]}

Heinig, KH ^{[1
]}

Schmidt, B ^{[1
]}

机构：

[1] Res Ctr Rossendorf, Inst Ion Beam Phys & Mat Res, D-01217 Dresden, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 178卷

关键词：

surface evolution; sputtering; re-deposition; ion induced surface modification; ion beam synthesis;

D O I：

10.1016/S0168-583X(00)00469-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The evolution of the shape of oxidized V-grooves on (0 0 1) Si under high-dose Get ion irradiation has been studied experimentally as well as theoretically. The V-grooves were formed by anisotropic etching and dry oxidation. A novel model of the surface evolution was developed including sputtering. re-deposition and swelling. The analytical equation was solved numerically for the V-groove geometry resulting in good agreement with cross-sectional TEM pictures. It is shown that sputtered material accumulates at the bottom of the V-grooves. This suggests also an accumulation of the implanted species, which can result in the formation of a very thin Ge-wire during subsequent annealing. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：109 / 114

页数：6

共 17 条

[11] ROUGHENING INSTABILITY AND ION-INDUCED VISCOUS RELAXATION OF SIO2 SURFACES [J].

MAYER, TM ;

CHASON, E ;

HOWARD, AJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1633-1643

[12] On the origin of surface smoothing by energetic cluster impact: Molecular dynamics simulation and mesoscopic modeling [J].

Moseler, M ;

Rattunde, O ;

Nordiek, J ;

Haberland, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 164 :522-536

[13] Formation of Ge nanowires in oxidized silicon V-grooves by ion beam synthesis [J].

Müller, T ;

Heinig, KH ;

Schmidt, B .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 :468-473

[14] Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation [J].

Nakajima, A ;

Futatsugi, T ;

Nakao, H ;

Usuki, T ;

Horiguchi, N ;

Yokoyama, N .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1316-1320

[15] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J].

SIGMUND, P .

PHYSICAL REVIEW, 1969, 184 (02) :383-+

[16] Encapsulated nanocrystals and quantum dots formed by ion beam synthesis [J].

White, CW ;

Budai, JD ;

Withrow, SP ;

Zhu, JG ;

Pennycook, SJ ;

Zuhr, RA ;

Hembree, DM ;

Henderson, DO ;

Magruder, RH ;

Yacaman, MJ ;

Mondragon, G ;

Prawer, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 :545-552

[17]

YAMAMURA Y, 1983, IPPJAM26, P59

← 1 2 →