HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructures

被引：10

作者：

Haase, M

Prost, W

Velling, P

Liu, Q

Tegude, FJ

机构：

[1] Gerhard Mercator Univ, Dept Solid State Elect, Sonderforsch Bereich SFB 254, D-47057 Duisburg, Germany

[2] Gerhard Mercator Univ, Elect Mat Dept, Sonderforsch Bereich SFB 254, D-47057 Duisburg, Germany

来源：

THIN SOLID FILMS | 1998年 / 319卷 / 1-2期

关键词：

double-barrier resonant tunnelling diodes; rocking curve; barrier; well layer;

D O I：

10.1016/S0040-6090(97)01103-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A nondestructive analysis of strained centrosymmetric double-barrier resonant tunnelling diode (DB-RTD) layers is proposed. In the measured (004) rocking curves, the intrinsic barrier-well-barrier sequence results in a beat under the strained layer peak which can be used for layer analysis down to a thickness of nine monolayers. Based on the kinematical theory, analytical relations are deduced which allow a direct correlation of the measured rocking-curve data to barrier and well-layer data. This method is applied to InP-based DB-RTD and is proven to be applicable to final devices including thick but lattice-matched contact layers. (C) 1998 Published by Elsevier Science S.A.

引用

收藏

页码：25 / 28

页数：4

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