GAXIN1-XAS/ALAS RESONANT-TUNNELING DIODES GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：11

作者：

KELLER, BP ^{[1
]}

YEN, JC ^{[1
]}

DENBAARS, SP ^{[1
]}

MISHRA, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 17期

关键词：

D O I：

10.1063/1.112748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth of GaxIn1-xAs/AlAs double-barrier heterostructures on InP and the fabrication of GaxIn1-xAs/AlAs resonant tunneling diodes (RTDs) by metalorganic chemical vapor deposition (MOCVD). High resolution x-ray diffraction measurements were used to evaluate the heterostructure interface quality. The RTDs achieved a room-temperature peak to valley ratio of 7.7:1 with peak current density of 9.6X10(4) A/cm(2). These are the best reported room-temperature results for any reported RTDs grown by MOCVD. (C) 1994 American Institute of Physics.

引用

页码：2159 / 2161

页数：3

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