BANDGAP AND INTERFACE ENGINEERING FOR ADVANCED ELECTRONIC AND PHOTONIC DEVICES

被引:15
作者
CAPASSO, F
机构
关键词
D O I
10.1016/0040-6090(92)90870-H
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Bandgap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modem growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous bandgap variations to be made. The transport properties of electrons and holes can be tuned independently and continuously for a given application. A new generation of devices with unique capabilities, ranging from solid-state photomultipliers to resonant-tunneling transistors, is emerging from this approach. Finally, the tunability of band discontinuities via doping interface dipoles is discussed.
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页码:59 / 67
页数:9
相关论文
共 36 条
[1]   SCATTERING-CONTROLLED TRANSMISSION RESONANCES AND NEGATIVE DIFFERENTIAL CONDUCTANCE BY FIELD-INDUCED LOCALIZATION IN SUPERLATTICES [J].
BELTRAM, F ;
CAPASSO, F ;
SIVCO, DL ;
HUTCHINSON, AL ;
CHU, SNG ;
CHO, AY .
PHYSICAL REVIEW LETTERS, 1990, 64 (26) :3167-3170
[2]  
BROWN ER, 1989, DEVICE RES C
[3]   RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].
CAPASSO, F ;
KIEHL, RA .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1366-1368
[4]   ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].
CAPASSO, F ;
TSANG, WT ;
HUTCHINSON, AL ;
WILLIAMS, GF .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40
[5]   NEW FLOATING-GATE ALGAAS/GAAS MEMORY DEVICES WITH GRADED-GAP ELECTRON INJECTOR AND LONG RETENTION TIMES [J].
CAPASSO, F ;
BELTRAM, F ;
MALIK, RJ ;
WALKER, JF .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :377-379
[6]   STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].
CAPASSO, F ;
TSANG, WT ;
WILLIAMS, GF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390
[7]   QUANTUM FUNCTIONAL DEVICES - RESONANT-TUNNELING TRANSISTORS, CIRCUITS WITH REDUCED COMPLEXITY, AND MULTIPLE-VALUED LOGIC [J].
CAPASSO, F ;
SEN, S ;
BELTRAM, F ;
LUNARDI, LM ;
VENGURLEKAR, AS ;
SMITH, PR ;
SHAH, NJ ;
MALIK, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2065-2082
[8]   BAND-GAP ENGINEERING VIA GRADED GAP, SUPER-LATTICE, AND PERIODIC DOPING STRUCTURES - APPLICATIONS TO NOVEL PHOTODETECTORS AND OTHER DEVICES [J].
CAPASSO, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :457-461
[9]   NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR [J].
CAPASSO, F ;
TSANG, WT ;
BETHEA, CG ;
HUTCHINSON, AL ;
LEVINE, BF .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :93-95
[10]   QUANTUM ELECTRON DEVICES [J].
CAPASSO, F ;
DATTA, S .
PHYSICS TODAY, 1990, 43 (02) :74-82