Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer

被引：4

作者：

Wheeler, C

Daryanani, S

Mathine, DL

Maracas, GN

Allee, DR

机构：

[1] VARIAN ION IMPLANT SYST,GLOUCESTER,MA 01930

[2] MOTOROLA PCRL,TEMPE,AZ 85284

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 02期

关键词：

integrated optoelectronics; light emitting diodes;

D O I：

10.1109/68.553089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method to monolithically integrate a GaAs MESFET and a resonant cavity LED is demonstrated. Current confinement in these two dissimilar devices is accomplished using a buried insulating layer formed by the thermal oxidation of AlAs. Fabrication and device performance under de bias as well as modulation results are briefly described.

引用

页码：194 / 196

页数：3

共 8 条

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