Threshold voltage definition and extraction for deep-submicron MOSFETs

被引：21

作者：

Zhou, X ^{[1
]}

Lim, KY ^{[1
]}

Qian, W ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 03期

关键词：

Constant-current method - Deep-submicron devices - Short-channel effects;

D O I：

10.1016/S0038-1101(01)00035-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The subtle difference in MOSFET threshold voltage between the two popular definitions, maximum-g(m) and constant current, is investigated in the deep-submicron regime. The result pinpoints to the importance of the lateral-field effect in linear region at very short gate length, and further supports the combined definition known as the "critical current at linear threshold" method, which includes short-channel effects while retaining the simplicity and consistency of the constant-current method. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：507 / 510

页数：4

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