A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modeling

被引：53

作者：

Zhou, X ^{[1
]}

Lim, KY

Lim, D

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 04期

关键词：

deep-submicron MOSFET modeling; DIBL; MOS threshold voltage;

D O I：

10.1109/16.753720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new definition of MOSFET threshold voltage is proposed, namely, the "critical-current at linear-threshold" method, which has a unique solution and is very simple to measure. This definition gives consistent values of threshold voltage for different regions of operation at long channel, and contains the information on short-channel effects at short channel, which is very useful for deep-submicron MOS device characterization and modeling. The proposed method effectively removes ambiguity of df facto industry standard of the constant-current method for MOS threshold voltage.

引用

页码：807 / 809

页数：3

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