(220)-oriented Cu(In,Ga)Se2 -: Evidence that it may improve solar cell performance

被引：13

作者：

Liao, D ^{[1
]}

Rockett, A ^{[1
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915865

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Recent solar cell results suggest that a (220) or (204) orientation of CIGS thin films may have unique and possibly superior properties. We have deposited high-quality epitaxial mixed (220) and (204)-oriented CIGS layers on GaAs (110). The surfaces consist of highly tilted terraces of large flat (112) facets alternating with rough (112) planes. Temperature-dependent Hall-effect shows up to a 20 fold decrease in carrier concentration relative to films grown with (112) and (002) orientations. Carrier compensation and other defects observed in the (002) and (112) oriented films was reduced without Na addition in the (220)/(204) films. Changes In the hole mobility were also observed. Theoretical modeling using the AMPS computer code suggests that such a change in carrier concentration could lead to improvements in device performances in sufficiently good devices, consistent with observations.

引用

页码：446 / 449

页数：4

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