Direct measurement of the magnetic field effects on carrier mobilities and recombination in tri-(8-hydroxyquinoline)-aluminum based light-emitting diodes

被引：33

作者：

Li, Feng ^{[1
]}

Xin, Linyuan ^{[1
]}

Liu, Shiyong ^{[2
]}

Hu, Bin ^{[3
]}

机构：

[1] Jilin Univ, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China

[2] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[3] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 07期

基金：

中国国家自然科学基金;

关键词：

TRANSIENT ELECTROLUMINESCENCE; ORGANIC SEMICONDUCTORS; SANDWICH DEVICES; ROOM-TEMPERATURE; MAGNETORESISTANCE; EMISSION; KINETICS;

D O I：

10.1063/1.3478014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetic field effects on the carrier mobilities and recombination in tri-(8-hydroxyquinoline)-aluminum (Alq(3)) based light-emitting diodes have been measured by the method of transient electroluminescence. It is confirmed that the magnetic field has no effect on the electron and hole mobilities in Alq(3) layers and can decrease the electron-hole recombination coefficient. The results imply that the dominant mechanism for the magnetic field effects in Alq(3) based light-emitting diodes is the interconversion between singlet e-h pairs and triplet e-h pairs modulated by the magnetic field when the driving voltage is larger than the onset voltage of the electroluminescence. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3478014]

引用

页数：3

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