On the effect of power cycling stress on IGBT modules

被引：64

作者：

Cova, P

Fantini, F

机构：

[1] Univ Parma, Dipartimento Ingn Informaz, I-43100 Parma, Italy

[2] Univ Modena, Dipartimento Sci Ingn, I-41100 Modena, Italy

[3] INFM, I-41100 Modena, Italy

来源：

MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 6-8期

关键词：

D O I：

10.1016/S0026-2714(98)00081-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

IGBT reliability is becoming of great relevance, due to the range of application of these devices. Nevertheless, no standard test methods have been established, in order to evaluate their power cycling reliability. On this paper we report on the effect of Delta T and T-jmax on the power cycling capability of IGBT dice, by means of a matrix of stress cycles with different values of Delta T and T-jmax. Failure analysis has been performed, in order to understand the failure mechanisms induced by the stress. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1347 / 1352

页数：6

共 10 条

[1] EVOLUTION OF MOS-BIPOLAR POWER SEMICONDUCTOR TECHNOLOGY [J].