Growth study of chemical beam epitaxy of GaNxP1-x using NH3 and tertiarybutylphosphine

被引：8

作者：

Li, NY ^{[1
]}

Wong, WS ^{[1
]}

Tomich, DH ^{[1
]}

Dong, HK ^{[1
]}

Solomon, JS ^{[1
]}

Grant, JT ^{[1
]}

Tu, CW ^{[1
]}

机构：

[1] UNIV DAYTON, RES INST, DAYTON, OH 45469 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 164卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)01027-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A study in the growth of GaNxP1-x epilayers by chemical beam epitaxy using tertiarybutylphosphine (TBP), ammonia (NH3), and elemental Ga or triethylgallium is reported. Monitoring reflection high-energy electron diffraction (RHEED) intensity oscillations, we observe that both group-III- and group-V-induced incorporation rates are increased when NH3 is introduced into a single cracker with TBP. From the difference in the periods of group-V-induced RHEED intensity oscillations, a 16% N incorporation is expected, but X-ray rocking curve measurement shows only 0.08% N. Using separate TBP and NH3 crackers results in no enhancement in incorporation rates. We conclude that the cracking efficiency of TBP is increased with NH3 co-injection.

引用

页码：180 / 184

页数：5

共 16 条

[11] INTERMEDIATE RANGE BETWEEN N-DOPED GAP AND GAP1-XNX ALLOYS - DIFFERENCE IN OPTICAL-PROPERTIES [J].