Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots

被引：22

作者：

Phillips, J ^{[1
]}

Bhattacharya, P

Venkateswaran, U

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Oakland Univ, Dept Phys, Rochester, MI 48309 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 11期

关键词：

D O I：

10.1063/1.123612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of the hydrostatic-pressure dependence of the photoluminescence from In0.5Al0.5As/Al0.25Ga0.75As self-assembled quantum dots. Three distinct regions of quantum-dot peak-energy shift with pressure are observed and are attributed to energy level crossings and band mixing effects. In addition, a large reduction in photoluminescence linewidth with applied pressure is noted. (C) 1999 American Institute of Physics. [S0003-6951(99)01211-5].

引用

页码：1549 / 1551

页数：3

共 10 条

[1] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].

BERGER, PR ;

CHANG, K ;

BHATTACHARYA, P ;

SINGH, J ;

BAJAJ, KK .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686

[2] Growth, spectroscopy, and laser application of self-ordered III-V quantum dots [J].

Bimberg, D ;

Grundmann, M ;

Ledentsov, NN .

MRS BULLETIN, 1998, 23 (02) :31-34

[3] COLLAPSE OF THE HARTREE TERM OF THE COULOMB INTERACTION IN A VERY DILUTE 2D ELECTRON-GAS [J].

ERNST, S ;

GONI, AR ;

SYASSEN, K ;

EBERL, K .

PHYSICAL REVIEW LETTERS, 1994, 72 (25) :4029-4032

[4] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[5] Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Γ-X crossover [J].

Itskevich, IE ;

Lyapin, SG ;

Troyan, IA ;

Klipstein, PC ;

Eaves, L ;

Main, PC ;

Henini, M .

PHYSICAL REVIEW B, 1998, 58 (08) :R4250-R4253

[6] Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study [J].

Jiang, HT ;

Singh, J .

PHYSICAL REVIEW B, 1997, 56 (08) :4696-4701

[7] In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001) [J].

Kobayashi, NP ;

Ramachandran, TR ;

Chen, P ;

Madhukar, A .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3299-3301

[8] VISIBLE LUMINESCENCE FROM SEMICONDUCTOR QUANTUM DOTS IN LARGE ENSEMBLES [J].

LEON, R ;

FAFARD, S ;

LEONARD, D ;

MERZ, JL ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1995, 67 (04) :521-523

[9] STATE MIXING IN INAS/GAAS QUANTUM DOTS AT THE PRESSURE-INDUCED GAMMA-X CROSSING [J].

LI, GH ;

GONI, AR ;

SYASSEN, K ;

BRANDT, O ;

PLOOG, K .

PHYSICAL REVIEW B, 1994, 50 (24) :18420-18425

[10] INVESTIGATION OF THE BAND-STRUCTURE OF THE STRAINED SYSTEMS INGAAS-GAAS AND INGAAS-ALGAAS BY HIGH-PRESSURE PHOTOLUMINESCENCE [J].

WILKINSON, VA ;

PRINS, AD ;

DUNSTAN, DJ ;

HOWARD, LK ;

EMENY, MT .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (07) :509-516

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