Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology

被引：99

作者：

Chau, R ^{[1
]}

Brask, J ^{[1
]}

Datta, S ^{[1
]}

Dewey, G ^{[1
]}

Doczy, M ^{[1
]}

Doyle, B ^{[1
]}

Kavalieros, J ^{[1
]}

Jin, B ^{[1
]}

Metz, M ^{[1
]}

Majumdar, A ^{[1
]}

Radosavljevic, M ^{[1
]}

机构：

[1] Intel Corp, Components Res, Technol & Mfg Grp, Hillsboro, OR 97124 USA

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 80卷

关键词：

nanotechnology; non-silicon; high-kappa dielectric; metal gate; high-mobility;

D O I：

10.1016/j.mee.2005.04.035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-kappa gate dielectrics and metal gate electrodes are required for enabling continued equivalent gate oxide thickness scaling, and hence high performance, and for controlling gate oxide leakage for both future silicon and emerging non-silicon nanoelectronic transistors. In addition, high-kappa gate dielectrics and metal gates are required for the successful demonstration of high performance logic transistors on high-mobility non-silicon substrates with high I-ON/I-OFF ratios.

引用

页码：1 / 6

页数：6

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