Epitaxial Heterostructures of Ultrathin Topological Insulator Nanoplate and Graphene

被引：203

作者：

Dang, Wenhui ^{[1
]}

Peng, Hailin ^{[1
]}

Li, Hui ^{[1
]}

Wang, Pu ^{[1
]}

Liu, Zhongfan ^{[1
]}

机构：

[1] Peking Univ, Ctr Nanochem, State Key Lab Struct Chem Unstable & Stable Speci, BNLMS,Coll Chem & Mol Engn, Beijing 100871, Peoples R China

来源：

NANO LETTERS | 2010年 / 10卷 / 08期

关键词：

Topological insulator; graphene; Dirac materials; bismuth selenide; van der Waals epitaxy; DER-WAALS EPITAXY; SINGLE DIRAC CONE; ELECTRONIC-STRUCTURE; BISMUTH TELLURIDE; RAMAN; BI2SE3; STRAIN; BI2TE3; SB2TE3; GROWTH;

D O I：

10.1021/nl100938e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The authors present a van der Waals epitaxy of high-quality ultrathin nanoplates of topological insulator Bi2Se3 on a pristine graphene substrate using a simple vapor-phase deposition method. Sub-10-nm-thick nanoplates of layered Bi2Se3 with defined orientations can be epitaxially grown on a few-layer pristine graphene substrate. We show the evolution of Raman spectra with the number of Bi2Se3 layers on few-layer graphene. Bi2Se3 nanoplates with a thickness of three quintuple-layers (3-QL) exhibit the strongest Raman intensity. Strain effects in the Bi2Se3/graphene nanoplate heterostructures is also studied by Raman spectroscopy. 1-QL and 2-QL Bi2Se3 nanoplates experience tensile stress, consistent with compressive stress in single-layer and bilayer graphene substrates. Our results suggest an approach for the synthesis of epitaxial heterostructures that consist of an ultrathin topological insulator and graphene, which may be a new direction for electronic and spintronic applications.

引用

页码：2870 / 2876

页数：7

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