Gold-cluster ranges in aluminium, silicon and copper

被引:35
作者
Andersen, HH [1 ]
Johansen, A [1 ]
Olsen, M [1 ]
Touboltsev, V [1 ]
机构
[1] Niels Bohr Inst, Orsted Lab, DK-2100 Copenhagen O, Denmark
关键词
clusters; ranges; range straggling; non-linear effects; nuclear stopping;
D O I
10.1016/S0168-583X(03)01479-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Single atom Au and Au-2, Au-3 and Au-7 clusters with energies of 10-100 keV/atom have been implanted at low fluence into Al, Si and Cu targets, the Au-7 clusters only at 44.3 keV/atom into Si. The range distributions were analyzed by oblique (15degrees) incidence RBS. In no case was the range found to be different for the cluster implant from that of the atomic implant at equal velocity, implying the nuclear stopping to be identical, but the 10 keV/atom implant in Cu showed the cluster distributions to be substantially broader than those of the atomic implants. The energies were thus too high to observe a possible 'clearing the way' effect, but the Cu results hint at a 'within spike' diffusion mechanism. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:56 / 62
页数:7
相关论文
共 29 条
[1]   NONLINEAR EFFECTS IN HEAVY-ION SPUTTERING [J].
ANDERSEN, HH ;
BAY, HL .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :953-954
[2]   Giant metal sputtering yields induced by 20-5000 keV atom gold clusters [J].
Andersen, HH ;
Brunelle, A ;
Della-Negra, S ;
Depauw, J ;
Jacquet, D ;
Le Beyec, Y ;
Chaumont, J ;
Bernas, H .
PHYSICAL REVIEW LETTERS, 1998, 80 (24) :5433-5436
[3]  
ANDERSEN HH, 1993, VIDENSK SELSK MAT FY, V43, P127
[4]  
ANDERSEN HH, 1977, SPUTTERING ION BOMBA, P104
[5]  
BEHAR M, 1985, NUCL INSTRUM METH B, V6, P453, DOI 10.1016/0168-583X(85)90002-3
[6]   Very large gold and silver sputtering yields induced by keV to MeV energy Aun clusters (n=1-13) -: art. no. 144106 [J].
Bouneau, S ;
Brunelle, A ;
Della-Negra, S ;
Depauw, J ;
Jacquet, D ;
Le Beyec, Y ;
Pautrat, M ;
Fallavier, M ;
Poizat, JC ;
Andersen, HH .
PHYSICAL REVIEW B, 2002, 65 (14) :1-8
[7]   DEFECTS AND LEAKAGE CURRENTS IN BF2 IMPLANTED PREAMORPHIZED SILICON [J].
BROTHERTON, SD ;
GOWERS, JP ;
YOUNG, ND ;
CLEGG, JB ;
AYRES, JR .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3567-3575
[8]  
Davies J. A., 1984, Ion implantation and beam processing, P81
[10]   ELECTRICAL-PROPERTIES OF SI HEAVILY IMPLANTED WITH BORON MOLECULAR-IONS [J].
FUSE, G ;
HIRAO, T ;
INOUE, K ;
TAKAYANAGI, S ;
YAEGASHI, Y .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3650-3653