Leakage mechanisms and dielectric properties of Al2O3/TiN-based metal-insulator-metal capacitors

被引：33

作者：

Meng, S ^{[1
]}

Basceri, C ^{[1
]}

Busch, BW ^{[1
]}

Derderian, G ^{[1
]}

Sandhu, G ^{[1
]}

机构：

[1] Micron Technol Inc, Proc R&D Ctr, Boise, ID 83707 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 21期

关键词：

D O I：

10.1063/1.1629373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We characterized thin Al2O3 dielectrics with TiN electrodes in a three-dimensional, high-aspect-ratio, metal-insulator-metal capacitor structure. Transmission electron microscopy images did not reveal any interfacial layer(s) or intermixing of the films. This was confirmed by series capacitance analysis. Extensive electrical characterization indicated a well-behaved dielectric response. Time and frequency domain measurements did not show any significant dielectric relaxation. Charge transport was controlled by a direct tunneling mechanism in the field range of 1.5 to 6 MV/cm for a 50 A film. The Fowler-Nordheim tunneling mechanism dominated the high field range (>6 MV/cm for a 50 A film), and the leakage currents became independent of dielectric thickness. The electron tunneling effective mass was found to be 0.2 m(e). (C) 2003 American Institute of Physics.

引用

页码：4429 / 4431

页数：3

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