Surface photovoltage measurement of hydrogen-treated Si surfaces

被引：27

作者：

Nauka, K ^{[1
]}

Kamins, TI ^{[1
]}

机构：

[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 01期

关键词：

D O I：

10.1149/1.1391602

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A contactless surface photovoltage technique was used to measure surface-potential barriers resulting from hydrogen termination of silicon surfaces and their evolution as the surfaces gradually oxidized in air at room temperature. Hydrogen termination formed by annealing in a hydrogen ambient was more complete than passivation formed by aqueous I-IF treatment. Eu addition, the surface-potential barrier depended on the wafer orientation and ordering of surface terraces by high temperature hydrogen annealing. Oxides grown at room temperature exhibited higher surface-potential barriers than oxides grown at elevated temperatures. (C) 1999 The Electrochemical Society. S0013-4651(98)02-037-0. All rights reserved.

引用

页码：292 / 295

页数：4

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