ATOMIC-FORCE MICROSCOPY OBSERVATION OF SI(100) SURFACE AFTER HYDROGEN ANNEALING

被引：31

作者：

YANASE, Y

HORIE, H

OKA, Y

SANO, M

SUMITA, S

SHIGEMATSU, T

机构：

[1] Sumitomo Sitix Corporation, Silicon Technology R&D Center, Saga 849-05, Kohoku, Kishima-gun

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 11期

关键词：

D O I：

10.1149/1.2059315

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Hydrogen gas plays an important role in the epitaxial growth process, acting as both a high temperature precleaning ambient and the carrier gas during epitaxial growth. The effect of hydrogen on the morphology and microroughness of Si(100) and Si(111) surfaces was investigated using atomic force microscopy under an atmospheric air ambient. The Si(100) surface after H2 annealing showed a periodic terrace and step structure reflecting the double-domain (2 x 1 + 1 x 2) reconstructed structure. This structure was maintained even after subsequent HCl vapor etching and epitaxial layer deposition in the Si epitaxial process.

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页码：3259 / 3263

页数：5

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