Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

被引：28

作者：

Chiu, Te-Wei ^{[1
]}

Tonooka, Kazuhiko ^{[2
]}

Kikuchi, Naoto ^{[2
]}

机构：

[1] Natl Taipei Univ Technol, Dept Mat & Mineral Resources Engn, Taipei 106, Taiwan

[2] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 22期

关键词：

VO2; ZnO; Buffer layer; b-Axis; Preferential orientation; PULSED-LASER DEPOSITION; TRANSITION; COATINGS;

D O I：

10.1016/j.apsusc.2010.04.097

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

VO2 thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO2 thin films on glass substrates. X-ray diffraction studies showed that the VO2 thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO2 deposition were optimized to grow highly b-axis oriented VO2 thin films. The metal-insulator transition properties of the VO2 film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：6834 / 6837

页数：4

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