Tunneling Spin Injection into Single Layer Graphene

被引：379

作者：

Han, Wei ^{[1
]}

Pi, K. ^{[1
]}

McCreary, K. M. ^{[1
]}

Li, Yan ^{[1
]}

Wong, Jared J. I. ^{[1
]}

Swartz, A. G. ^{[1
]}

Kawakami, R. K. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 16期

基金：

美国国家科学基金会;

关键词：

MAGNETORESISTANCE; PRECESSION; TRANSPORT; METAL;

D O I：

10.1103/PhysRevLett.105.167202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A nonlocal magnetoresistance (Delta R-NL) of 130 Omega is observed at room temperature, which is the largest value observed in any material. Investigating Delta R-NL vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

引用

页数：4

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