Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

被引：103

作者：

Han, Wei ^{[1
]}

Wang, W. H. ^{[1
]}

Pi, K. ^{[1
]}

McCreary, K. M. ^{[1
]}

Bao, W. ^{[1
]}

Li, Yan ^{[1
]}

Miao, F. ^{[1
]}

Lau, C. N. ^{[1
]}

Kawakami, R. K. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 13期

基金：

美国国家科学基金会;

关键词：

MAGNETORESISTANCE; PHASE;

D O I：

10.1103/PhysRevLett.102.137205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spin-dependent properties of single-layer graphene (SLG) have been studied by nonlocal spin valve measurements at room temperature. Gate voltage dependence shows that the nonlocal magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic-nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the nonlocal MR reveal an electron-hole asymmetry in which the nonlocal MR is roughly independent of bias for electrons, but varies significantly with bias for holes.

引用

页数：4

共 31 条

[1] Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point [J].

Blake, P. ;

Yang, R. ;

Morozov, S. V. ;

Schedin, F. ;

Ponomarenko, L. A. ;

Zhukov, A. A. ;

Nair, R. R. ;

Grigorieva, I. V. ;

Novoselov, K. S. ;

Geim, A. K. .

SOLID STATE COMMUNICATIONS, 2009, 149 (27-28) :1068-1071

[2] Contact resistance and shot noise in graphene transistors [J].

Cayssol, J. ;

Huard, B. ;

Goldhaber-Gordon, D. .

PHYSICAL REVIEW B, 2009, 79 (07)

[3] Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations [J].

Chantis, Athanasios N. ;

Belashchenko, Kirill D. ;

Smith, Darryl L. ;

Tsymbal, Evgeny Y. ;

van Schilfgaarde, Mark ;

Albers, Robert C. .

PHYSICAL REVIEW LETTERS, 2007, 99 (19)

[4] Gate-tunable graphene spin valve [J].

Cho, Sungjae ;

Chen, Yung-Fu ;

Fuhrer, Michael S. .

APPLIED PHYSICS LETTERS, 2007, 91 (12)

[5] Spin extraction theory and its relevance to spintronics [J].

Dery, H. ;

Sham, L. J. .

PHYSICAL REVIEW LETTERS, 2007, 98 (04)

[6] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[7] Doping graphene with metal contacts [J].

Giovannetti, G. ;

Khomyakov, P. A. ;

Brocks, G. ;

Karpan, V. M. ;

van den Brink, J. ;

Kelly, P. J. .

PHYSICAL REVIEW LETTERS, 2008, 101 (02)

[8] Gate control of spin transport in multilayer graphene [J].

Goto, H. ;

Kanda, A. ;

Sato, T. ;

Tanaka, S. ;

Ootuka, Y. ;

Odaka, S. ;

Miyazaki, H. ;

Tsukagoshi, K. ;

Aoyagi, Y. .

APPLIED PHYSICS LETTERS, 2008, 92 (21)

[9] Graphene spin valve devices [J].

Hill, Ernie W. ;

Geim, Andre K. ;

Novoselov, Konstantin ;

Schedin, Frederik ;

Blake, Peter .

IEEE TRANSACTIONS ON MAGNETICS, 2006, 42 (10) :2694-2696

[10] Evidence of the role of contacts on the observed electron-hole asymmetry in graphene [J].

Huard, B. ;

Stander, N. ;

Sulpizio, J. A. ;

Goldhaber-Gordon, D. .

PHYSICAL REVIEW B, 2008, 78 (12)

← 1 2 3 4 →