Current status of optical maskless lithography

被引:32
作者
Martinsson, H
Sandstrom, T
Bleeker, A
Hintersteiner, JD
机构
[1] Micron Laser Syst AB, S-18303 Taby, Sweden
[2] ASML, NL-5500 AH Veldhoven, Netherlands
[3] ASML, Wilton, CT 06897 USA
来源
JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS | 2005年 / 4卷 / 01期
关键词
maskless lithography; spatial light modulators; microlithography; micromirrors; tilting mirrors; piston mirrors; resolution enhancement; phase shifting; chromeless phase lithography;
D O I
10.1117/1.1862649
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We review the current status of optical maskless lithography technology. The optical maskless systems presented in literature are either aimed for low-cost, large-feature, low-end production, or high-end performance directly competing with state of the art optical scanners. In the latter case, optical maskless systems are based on piston or tilting micromirror spatial light modulators (SLMs). Similar performance can be achieved with both mirror types, but tilting mirrors offer lower manufacturing complexity, the possibility of using larger mirrors, less complex rasterizing algorithms, and lower demands on the data path. This indicates that the tilting mirror arrangement might be more appealing for high-performance, high-capacity, economical optical maskless lithography. With the latest technology in SLM and rasterizing technology, an optical maskless tool can match regular mask-based scanners in all imaging modes at the 65-nm node, including binary, weak and strong phase-shifting, phase edge, and chromeless phase lithography. Optical maskless lithography can further provide an almost complete transparency with current lithography technology in terms of design rules, optical proximity correction (OPC) models, and illumination settings. Any difference is due not to the SLM but to the reticle process and electromagnetic properties. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码:1 / 15
页数:15
相关论文
共 17 条
[1]   High-resolution maskless lithography [J].
Chan, KF ;
Feng, ZQ ;
Yang, R ;
Ishikawa, A ;
Mei, WH .
JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2003, 2 (04) :331-339
[2]   Application of rigorous electromagnetic simulation to SLM-based maskless lithography for 65nm node [J].
Croffie, E ;
Eib, N ;
Callan, N ;
BabaAli, N ;
Latypov, A ;
Hintersteiner, J ;
Sandstrom, T ;
Bleeker, A ;
Cummings, K .
23RD ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 2003, 5256 :842-850
[3]   Parallel maskless optical lithography for prototyping, low-volume production, and research [J].
Gil, D ;
Menon, R ;
Tang, XD ;
Smith, HI ;
Carter, DJD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06) :2597-2601
[4]  
Goodman J., 2000, Statistical Optics
[5]  
Goodman J.W., 1996, Opt. Eng, V35, P1513, DOI DOI 10.1016/J.APSUSC.2017.08.033
[6]   Mask cost and cycle time reduction [J].
Hsieh, HC ;
Hung, J ;
Chin, A ;
Lee, SC ;
Shin, JJ ;
Liu, RG ;
Lin, B .
PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY X, 2003, 5130 :4-15
[7]   Massively parallel, large-area maskless lithography [J].
Klosner, M ;
Jain, K .
APPLIED PHYSICS LETTERS, 2004, 84 (15) :2880-2882
[8]  
MACK C, 2001, P SOC PHOTO-OPT INS, V4562, P537
[9]   FEASIBILITY STUDY OF NEW GRAYBEAM WRITING STRATEGIES FOR RASTER SCAN MASK GENERATION [J].
MURRAY, A ;
ABBOUD, F ;
RAYMOND, F ;
BERGLUND, CN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2390-2396
[10]   Continuous Image Writer with improved critical dimension performance for high-accuracy maskless optical patterning [J].
Paufler, J ;
Brunn, S ;
Körner, T ;
Kühling, F .
MICROELECTRONIC ENGINEERING, 2001, 57-8 :31-40