Fabrication of highly ordered silicon oxide dots and stripes from block copolymer thin films

被引:122
作者
Park, Soojin [1 ]
Kim, Bokyung [1 ]
Wang, Jia-Yu [1 ]
Russell, Thomas P. [1 ]
机构
[1] Univ Massachusetts, Dept Polymer Sci & Engn, Amherst, MA 01003 USA
关键词
D O I
10.1002/adma.200701997
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A general route to fabricate highly ordered arrays of nanoscopic silicon oxide dots and stripes (see figure) from block copolymer thin films is described. Poly (styrene-b-4-vinylpyridine) thin films with cylindrical microdomains oriented normal and parallel to the surface were used as templates for the fabrication of nanoscopic silicon oxide, with polydimethylsiloxane as the inorganic precursor.
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页码:681 / +
页数:6
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