Controlling emission wavelength from InAs self-assembled quantum dots on InP (001) during MOCVD

被引：22

作者：

Sakuma, Y

Takemoto, K

Hirose, S

Usuki, T

Yokoyama, N

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 26卷 / 1-4期

关键词：

quantum dots; InAs; InP; MOCVD;

D O I：

10.1016/j.physe.2004.08.028

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We studied the growth of InAs quantum dots on TO (0 0 1) substrates in a low-pressure metalorganic chemical vapor deposition by using a so-called InP 'double-cap' procedure. With double-capping, a photoluminescence spectrum is modified into a series of multiple peaks, where the emission peaks arise from several quantum dot families with different heights changing in a step of integer number of an InAs monolayer. Cross-sectional transmission electron micrograph observations revealed that the shape of double-capped dots is dramatically changed into a thin plate-like shape with extremely flat upper and lower interfaces, being consistent with our interpretation of the photoluminescence spectrum. We showed that the procedure was extremely useful for controlling the emission wavelength from quantum dots in an InAs/InP (0 0 1) system. (C) 2004 Elsevier B.V. All rights reserved.

引用

收藏

页码：81 / 85

页数：5

相关论文

共 13 条

[1] Effects of substrate doping and surface roughness on self-assembling InAs/InP quantum dots [J].

Borgström, M ;

Johansson, J ;

Landin, L ;

Seifert, W .

APPLIED SURFACE SCIENCE, 2000, 165 (2-3) :241-247

[2] ISLAND FORMATION IN ULTRA-THIN INAS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY [J].

CARLIN, JF ;

HOUDRE, R ;

RUDRA, A ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :3018-3020

[3] Growth of self-assembled InAs and InAsxP1-x dots on InP by metalorganic vapour phase epitaxy [J].

Carlsson, N ;

Junno, T ;

Montelius, L ;

Pistol, ME ;

Samuelson, L ;

Seifert, W .

JOURNAL OF CRYSTAL GROWTH, 1998, 191 (03) :347-356

[4] Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001) [J].

Marchand, H ;

Desjardins, P ;

Guillon, S ;

Paultre, JE ;

Bougrioua, Z ;

Yip, RYF ;

Masut, RA .

APPLIED PHYSICS LETTERS, 1997, 71 (04) :527-529

[5] Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission [J].

Miska, P ;

Paranthoen, C ;

Even, J ;

Dehaese, O ;

Folliot, H ;

Bertru, N ;

Loualiche, S ;

Senes, M ;

Marie, X .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (10) :L63-L67

[6] Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm [J].

Paranthoen, C ;

Bertru, N ;

Dehaese, O ;

Le Corre, A ;

Loualiche, S ;

Lambert, B ;

Patriarche, G .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1751-1753

[7] RELATIONSHIP BETWEEN SELF-ORGANIZATION AND SIZE OF INAS ISLANDS ON INP(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

PONCHET, A ;

LECORRE, A ;

LHARIDON, H ;

LAMBERT, B ;

SALAUN, S .

APPLIED PHYSICS LETTERS, 1995, 67 (13) :1850-1852

[8] Using As/P exchange processes to modify InAs/InP quantum dots [J].

Poole, PJ ;

Williams, RL ;

Lefebvre, J ;

Moisa, S .

JOURNAL OF CRYSTAL GROWTH, 2003, 257 (1-2) :89-96

[9] Comment on "Thermal annealing effect on the intersublevel transitions in InAs quantum dots" [Appl. Phys. Lett. 78, 2196 (2001)] [J].

Poole, PJ ;

Aers, GC .

APPLIED PHYSICS LETTERS, 2002, 80 (25) :4867-4868

[10] Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots [J].

Poole, PJ ;

McCaffrey, J ;

Williams, RL ;

Lefebvre, J ;

Chithrani, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04) :1467-1470