First evidence of resistive switching in polycrystalline GaV4S8 thin layers

被引：18

作者：

Souchier, Emeline ^{[1
]}

Cario, Laurent ^{[1
]}

Corraze, Benoit ^{[1
]}

Moreau, Philippe ^{[1
]}

Mazoyer, Pascale ^{[2
]}

Estournes, Claude ^{[3
]}

Retoux, Richard ^{[4
]}

Janod, Etienne ^{[1
]}

Besland, Marie-Paule ^{[1
]}

机构：

[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, F-44322 Nantes, France

[2] STMicroelectronics, F-38920 Crolles, France

[3] UMR CNRS 5085 UPS INP, CIRIMAT, F-31062 Toulouse 4, France

[4] ENSICAEN, CNRS, UMR 6508, CRISMAT, F-14050 Caen 4, France

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 02期

关键词：

thin films; resistive switching; GaVS; magnetron sputtering; RANDOM-ACCESS MEMORY; MOTT INSULATOR; POSSIBLE SUPERCONDUCTIVITY; FILMS; RESISTANCE;

D O I：

10.1002/pssr.201004392

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM(4)X(8) (A = Ga, Ge; M = V, Nb, Ta; X = S, Se). Here we report on the first synthesis of thin layers (thicknesses in the 100 to 1000 nm range) of GaV4S8 by RF magnetron sputtering process. Energy dispersive spectroscopy, X-ray diffraction and TEM analyses attest the high quality of polycrystalline GaV4S8 thin layers. Electrical measurements demonstrate that deposited GaV4S8 thin films exhibit a non-volatile reversible resistive switching at room temperature with writing/erasing times of similar to 10 mu s and a memory window (R-high-R-low)/R-low > 33%. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：53 / 55

页数：3

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