Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

被引：116

作者：

Cario, Laurent ^{[1
]}

Vaju, Cristian ^{[1
]}

Corraze, Benoit ^{[1
]}

Guiot, Vincent ^{[1
]}

Janod, Etienne ^{[1
]}

机构：

[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 45期

关键词：

POSSIBLE SUPERCONDUCTIVITY; TRANSITION; GATA4SE8;

D O I：

10.1002/adma.201002521

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Flash memories (USB portable drives) are close to their miniaturization limits. The ultimate evolution of such devices is believed to exploit different concepts such as electronic phase transitions. Here we show that an electric field can trigger fast resistive switching in the fragile Mott insulators AM(4)X(8) (A = Ga, Ge; M = V, Nb, Ta; X = S, Se). This new type of resistive switching could lead to a new class of resistive random access memory (RRAM) with fast writing/erasing times (down to 50 ns) and resistance ratios Delta R/R of the order of 25% at room temperature.

引用

页码：5193 / +

页数：6

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