Electric-Field-Assisted Nanostructuring of a Mott Insulator

被引：20

作者：

Dubost, Vincent ^{[1
]}

Cren, Tristan ^{[1
]}

Vaju, Cristian ^{[2
]}

Cario, Laurent ^{[2
]}

Corraze, Benoit ^{[2
]}

Janod, Etienne ^{[2
]}

Debontridder, Francois ^{[1
]}

Roditchev, Dimitri ^{[1
]}

机构：

[1] Univ Paris 06, CNRS, Inst Nanosci Paris, UMR 75 78, F-75015 Paris, France

[2] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France

来源：

ADVANCED FUNCTIONAL MATERIALS | 2009年 / 19卷 / 17期

关键词：

SCANNING-TUNNELING-MICROSCOPY; POSSIBLE SUPERCONDUCTIVITY; FILMS; RESISTANCE; SURFACE; GOLD; TIP;

D O I：

10.1002/adfm.200900208

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Here, the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa(4)Se(8) that allows highly reproducible nanoscaled writing by means of scanning tunneling microscopy (STM) is reported. The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa(4)Se(8) becomes mechanically instable: at voltage biases >1.1 V, the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer-sized craters. The formed pattern can be indestructibly "read" by STM at a lower voltage bias, thus allowing 5 Tdots inch(-2) dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa(4)Se(8) might give new clues in the understanding of the electric pulse induced resistive switching recently observed in this stoichiometric Mott insulator.

引用

页码：2800 / 2804

页数：5

共 17 条

[1] Transition from Mott insulator to superconductor in GaNb4Se8 and GaTa4Se8 under high pressure -: art. no. 126403 [J].

Abd-Elmeguid, MM ;

Ni, B ;

Khomskii, DI ;

Pocha, R ;

Johrendt, D ;

Wang, X ;

Syassen, K .

PHYSICAL REVIEW LETTERS, 2004, 93 (12) :126403-1

[2]

BENYAICH H, 1984, J LESS-COMMON MET, V102, P9, DOI 10.1016/0022-5088(84)90384-9

[3] Analysis at atomic level of dislocation emission and motion around nanoindentations in gold [J].

Carrasco, E ;

González, MA ;

de la Fuente, OR ;

Rojo, JM .

SURFACE SCIENCE, 2004, 572 (2-3) :467-475

[4] FIELD EVAPORATION BETWEEN A GOLD TIP AND A GOLD SURFACE IN THE SCANNING TUNNELING MICROSCOPE CONFIGURATION [J].

CHANG, CS ;

SU, WB ;

TSONG, TT .

PHYSICAL REVIEW LETTERS, 1994, 72 (04) :574-577

[5] Nanoscale surface modification and nanostructural fabrication of YBa2Cu3O7-x thin films by scanning tunneling microscopy [J].

Fan, YC ;

Fitzgerald, AG ;

Cairns, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (05) :2377-2383

[6] AFM tip induced formation of nanometer scale structures on WSe2 under defined conditions [J].

Jaeckel, B ;

Gassenbauer, Y ;

Jaegermann, W ;

Tomm, Y .

SURFACE SCIENCE, 2005, 597 (1-3) :65-79

[7] Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].

Kim, D. C. ;

Seo, S. ;

Ahn, S. E. ;

Suh, D. -S. ;

Lee, M. J. ;

Park, B. -H. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. -J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[8] Systematic investigations of nanostructuring by scanning tunneling microscopy [J].

Koning, R ;

Jusko, O ;

Koenders, L ;

Schlachetzki, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01) :48-53

[9] Atomic force microscope lithography in perovskite manganite La0.8Ba0.2MnO3 films [J].

Li, RW ;

Kanki, T ;

Tohyama, HA ;

Zhang, J ;

Tanaka, H ;

Takagi, A ;

Matsumoto, T ;

Kawai, T .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) :7091-7093

[10] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

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