Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals

被引:124
作者
Fujii, M [1 ]
Toshikiyo, K [1 ]
Takase, Y [1 ]
Yamaguchi, Y [1 ]
Hayashi, S [1 ]
机构
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
关键词
D O I
10.1063/1.1590409
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence (PL) properties of heavily P- and B-doped Si nanocrystals (nc-Si) are studied. By simultaneously doping two types of impurities, nc-Si exhibit strong PL at around 0.9 eV at room temperature. The temperature quenching of the PL is very small. Although the PL peak energy is very close to that of dangling-bond related PL previously observed, all of the observed properties, i.e., decay dynamics, degree of temperature quenching, etc., are apparently different. The transition between donor and acceptor states in nc-Si is the possible origin of the low-energy PL. (C) 2003 American Institute of Physics.
引用
收藏
页码:1990 / 1995
页数:6
相关论文
共 26 条
[1]   HYDROGENIC IMPURITY LEVELS, DIELECTRIC-CONSTANT, AND COULOMB CHARGING EFFECTS IN SILICON CRYSTALLITES [J].
ALLAN, G ;
DELERUE, C ;
LANNOO, M ;
MARTIN, E .
PHYSICAL REVIEW B, 1995, 52 (16) :11982-11988
[2]   IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON [J].
CALCOTT, PDJ ;
NASH, KJ ;
CANHAM, LT ;
KANE, MJ ;
BRUMHEAD, D .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) :L91-L98
[3]   THEORETICAL DESCRIPTIONS OF POROUS SILICON [J].
DELERUE, C ;
LANNOO, M ;
ALLAN, G ;
MARTIN, E .
THIN SOLID FILMS, 1995, 255 (1-2) :27-34
[4]  
DIENER J, 2001, PHYS REV B, V93, DOI UNSP 073302
[5]   1.54 mu m photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+ [J].
Fujii, M ;
Yoshida, M ;
Kanzawa, Y ;
Hayashi, S ;
Yamamoto, K .
APPLIED PHYSICS LETTERS, 1997, 71 (09) :1198-1200
[6]   Photoluminescence from B-doped Si nanocrystals [J].
Fujii, M ;
Hayashi, S ;
Yamamoto, K .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) :7953-7957
[7]   Photoluminescence from SiO2 films containing Si nanocrystals and Er:: Effects of nanocrystalline size on the photoluminescence efficiency of Er3+ [J].
Fujii, M ;
Yoshida, M ;
Hayashi, S ;
Yamamoto, K .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (08) :4525-4531
[8]   Hyperfine structure of the electron spin resonance of phosphorus-doped Si nanocrystals [J].
Fujii, M ;
Mimura, A ;
Hayashi, S ;
Yamamoto, Y ;
Murakami, K .
PHYSICAL REVIEW LETTERS, 2002, 89 (20) :206805-206805
[9]   Photoluminescence from Si nanocrystals dispersed in phosphosilicate glass thin films: Improvement of photoluminescence efficiency [J].
Fujii, M ;
Mimura, A ;
Hayashi, S ;
Yamamoto, K .
APPLIED PHYSICS LETTERS, 1999, 75 (02) :184-186
[10]   Improvement in photoluminescence efficiency of SiO2 films containing Si nanocrystals by P doping:: An electron spin resonance study [J].
Fujii, M ;
Mimura, A ;
Hayashi, S ;
Yamamoto, K ;
Urakawa, C ;
Ohta, H .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) :1855-1857