Effects of design and operating variables on process characteristics in a methane discharge: a numerical study

被引:26
作者
Bera, K
Farouk, B [1 ]
Lee, YH
机构
[1] Drexel Univ, Dept Mech Engn & Mech, Philadelphia, PA 19104 USA
[2] Drexel Univ, Dept Chem Engn, Philadelphia, PA 19104 USA
关键词
D O I
10.1088/0963-0252/10/2/311
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
A self-consistent two-dimensional radio frequency capacitively coupled glow discharge model has been developed in cylindrical coordinates for a methane discharge using a fluid model. The objective of the study is to identify the effects of design and operating variables of the reactor on the process characteristics such as the deposition rate, uniformity and the quality of the diamond-like-carbon film. The simulations provide insights to charged species dynamics and investigate their effects on the plasma process for a depositing methane discharge. The model includes continuity equations for electrons and positive and negative ions, and energy equation for electrons. Swarm data as a function of electron energy are provided as input to the model. The model predicts the electron density, ion density, and their fluxes and energies to the cathode. The roles of electrons, dominating ions and radicals in a capacitively coupled discharge are investigated. The radical and neutral densities in the discharge are calculated using a gas phase chemistry model. The diamond-like-carbon thin-film deposition rate is predicted using surface chemistry model. The gas phase chemistry model considers diffusion of radicals and neutrals along with creation and loss terms. The surface deposition/etching process involves adsorption-desorption, adsorption layer reaction, ion stitching, direct ion incorporation, etching and carbon sputtering. A systematic parametric study of plasma processing has been performed to identify process parameters to obtain better film deposition/etching on a wafer. The present work shows how plasma equipment simulation can be used for the practical investigation and optimization of a plasma-assisted chemical vapour deposition process. The simultaneous treatment of plasma dynamics and surface processes enables a very precise prediction of the process characteristics in terms of the film deposition rate, uniformity and the quality as functions of discharge control parameters and the reactor geometry.
引用
收藏
页码:211 / 225
页数:15
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