Carbon nitride thin films prepared by reactive rf magnetron sputtering

被引:12
作者
Logothetidis, S [1 ]
Lefakis, H [1 ]
Gioti, M [1 ]
机构
[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54006 Thessaloniki, Greece
关键词
carbon composites; plasma sputtering; infrared spectroscopy; optical properties;
D O I
10.1016/S0008-6223(98)00073-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nitrogenated amorphous carbon thin films (CNx) were prepared by reactive r.f. magnetron sputtering from a graphite target in a nitrogen containing plasma (up to 4.4 at%) on Si substrates. All main controllable deposition conditions (such as base and deposition pressure, power at target, target-substrate distance, substrate bias voltage) were kept constant throughout the series of experiments and the only variable parameter was the nitrogen flux (0-2 seem). Iii situ spectroscopic ellipsometry (SE) in the energy region 1.5-5.5 eV in combination with Bruggeman's effective medium theory analysis was used per iterative deposition layer to monitor the Elm thickness and diamond character. The C:N chemical bonding characteristics of the films were also examined with the new Fourier transform IR ellipsometry technique. It was found that the films have a mixed character composed of constituents (phases) of sp(3) and sp(2) type bonding. The film composition in terms of sp3, sp(2) and void concentration as a function of film thickness and nitrogen concentration in the plasma was determined. The plasma nitrogen concentration seems to directly affect the film deposition rate and diamond character of the films by favoring sp(3) bond formation. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:757 / 760
页数:4
相关论文
共 22 条
[1]   OPTICAL-PROPERTIES OF THIN-FILMS [J].
ASPNES, DE .
THIN SOLID FILMS, 1982, 89 (03) :249-262
[2]   RAMAN-SCATTERING OF LASER-DEPOSITED AMORPHOUS-CARBON [J].
BACSA, WS ;
LANNIN, JS ;
PAPPAS, DL ;
CUOMO, JJ .
PHYSICAL REVIEW B, 1993, 47 (16) :10931-10934
[3]   FORMATION OF CARBON NITRIDE FILMS ON SI(100) SUBSTRATES BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED VAPOR-DEPOSITION [J].
BOUSETTA, A ;
LU, M ;
BENSAOULA, A ;
SCHULTZ, A .
APPLIED PHYSICS LETTERS, 1994, 65 (06) :696-698
[4]   Infrared ellipsometry investigation of SIOxNy thin films on silicon [J].
BrunetBruneau, A ;
Vuye, G ;
Frigerio, JM ;
Abeles, F ;
Rivory, J ;
Berger, M ;
Chaton, P .
APPLIED OPTICS, 1996, 35 (25) :4998-5004
[5]   CARBON NITRIDE FILMS PRODUCED BY HIGH-ENERGY SHOCK PLASMA DEPOSITION [J].
BURSILL, LA ;
PENG, JL ;
GURARIE, VN ;
ORLOV, AV ;
PRAWER, S .
JOURNAL OF MATERIALS RESEARCH, 1995, 10 (09) :2277-2285
[6]   Investigation of carbon nitride films by cathodic arc evaporation [J].
Chhowalla, M ;
Alexandrou, I ;
Kiely, C ;
Amaratunga, GAJ ;
Aharonov, R ;
Fontana, RF .
THIN SOLID FILMS, 1996, 290 :103-106
[7]   PROPERTIES OF CARBON NITRIDE THIN-FILMS PREPARED BY ION AND VAPOR-DEPOSITION [J].
CHUBACI, JFD ;
SAKAI, T ;
YAMAMOTO, T ;
OGATA, K ;
EBE, A ;
FUJIMOTO, F .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :463-466
[8]   Ion beam deposited carbon nitride films: Characterization and identification of chemical sputtering [J].
Hammer, P ;
Baker, MA ;
Lenardi, C ;
Gissler, W .
THIN SOLID FILMS, 1996, 290 :107-111
[9]   Plasma diagnostic studies to the carbon nitride film deposition by reactive rf magnetron sputtering [J].
Kaltofen, R ;
Sebald, T ;
Weise, G .
THIN SOLID FILMS, 1996, 290 :112-119
[10]   SYMMETRY-BREAKING IN NITROGEN-DOPED AMORPHOUS-CARBON - INFRARED OBSERVATION OF THE RAMAN-ACTIVE G-BANDS AND D-BANDS [J].
KAUFMAN, JH ;
METIN, S ;
SAPERSTEIN, DD .
PHYSICAL REVIEW B, 1989, 39 (18) :13053-13060