Infrared ellipsometry investigation of SIOxNy thin films on silicon

被引：6

作者：

BrunetBruneau, A ^{[1
]}

Vuye, G ^{[1
]}

Frigerio, JM ^{[1
]}

Abeles, F ^{[1
]}

Rivory, J ^{[1
]}

Berger, M ^{[1
]}

Chaton, P ^{[1
]}

机构：

[1] CEA,LAB ELECT TECHNOL & INSTRUMENTAT,COUCHES MINCES OPT,F-38054 GRENOBLE,FRANCE

来源：

APPLIED OPTICS | 1996年 / 35卷 / 25期

关键词：

silicon oxynitrides; IR ellipsometry; vibration bands;

D O I：

10.1364/AO.35.004998

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The dielectric function <(epsilon)over tilde>(<(epsilon)over tilde> = epsilon(1) + i epsilon(2)) of silicon oxynitride films deposited on silicon wafers by dual ion-beam sputtering is determined by infrared ellipsometry between 580 and 5000 cm(-1). The phase-separation model is unable to reproduce the experimental data. The dependence of <(epsilon)over tilde> on stoichiometry is analyzed with the microscopic Si-centered tetrahedron model. The random-bonding model with five SiO4-jNj (j = 0.4) tetrahedra gives a good description of the spectra, provided the dielectric function of the mixed tetrahedra is carefully chosen. (C) 1996 Optical Society of America

引用

页码：4998 / 5004

页数：7

共 21 条

[1]

APFEL JH, 1990, P SOC PHOTO-OPT INS, V1270, P94, DOI 10.1117/12.20368

[2] DIELECTRIC FUNCTION OF SI-SIO2 AND SI-SI3N4 MIXTURES [J].

ASPNES, DE ;

THEETEN, JB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4928-4935

[3] INFRARED RESPONSE OF SILICON OXYNITRIDES INVESTIGATED BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].

DIATEZUA, MD ;

THIRY, PA ;

LAMBIN, P ;

CAUDANO, R .

PHYSICAL REVIEW B, 1993, 48 (12) :8701-8708

[4] INFRARED OPTICAL-PROPERTIES OF SILICON OXYNITRIDE FILMS - EXPERIMENTAL-DATA AND THEORETICAL INTERPRETATION [J].

ERIKSSON, TS ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :2081-2091

[5] CONNECTION BETWEEN SI-N AND SI-H VIBRATIONAL PROPERTIES IN AMORPHOUS SINX-H FILMS [J].

HASEGAWA, S ;

ANBUTSU, H ;

KURATA, Y .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 59 (03) :365-375

[6]

IDA M, 1994, P SOC PHOTO-OPT INS, V2253, P404

[7] QUANTITATIVE-ANALYSIS OF THE EFFECT OF DISORDER-INDUCED MODE-COUPLING ON INFRARED-ABSORPTION IN SILICA [J].

KIRK, CT .

PHYSICAL REVIEW B, 1988, 38 (02) :1255-1273

[8]

LEPLAN H, 1994, P SOC PHOTO-OPT INS, V2253, P1263

[9] LOW-TEMPERATURE GROWTH OF SILICON DIOXIDE FILMS - A STUDY OF CHEMICAL BONDING BY ELLIPSOMETRY AND INFRARED-SPECTROSCOPY [J].

LUCOVSKY, G ;

MANITINI, MJ ;

SRIVASTAVA, JK ;

IRENE, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :530-537

[10] THE CONSTITUTION OF NITRIDED OXIDES AND REOXIDIZED NITRIDED OXIDES ON SILICON [J].

NAIMAN, ML ;

KIRK, CT ;

EMERSON, BL ;

TAITEL, JB ;

SENTURIA, SD .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :779-792

← 1 2 3 →