Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy

被引：48

作者：

McKay, HA ^{[1
]}

Feenstra, RM

Schmidtling, T

Pohl, UW

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Tech Univ Berlin, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.1337625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The pair distribution function of nitrogen atoms in GaAs0.983N0.017 has been determined by scanning tunneling microscopy. Nitrogen atoms in the first and third planes relative to the cleaved (1 (1) over bar0) surface are imaged. A modest enhancement in the number of nearest-neighbor pairs particularly with [001] orientation is found, although at larger separations the distribution of N pair separations is found to be random. (C) 2001 American Institute of Physics.

引用

页码：82 / 84

页数：3

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