Solution-based fabrication of high-k gate dielectrics for next-generation metal-oxide semiconductor transistors

被引：59

作者：

Aoki, Y ^{[1
]}

Kunitake, T ^{[1
]}

机构：

[1] RIKEN, Topochem Design Lab, Frontier Res Syst, Wako, Saitama 3510198, Japan

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 02期

关键词：

D O I：

10.1002/adma.200305731

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The layer-by-layer adsorption of precursor metal alkoxides in solution and post-annealing at 400degreesC affords an alternate technique to the atomic layer chemical vapour deposition method for fabrication of next-generation high-kappa gate dielectrics. A void-free TiO2-La2O3 composite film (see Figure) with 18 nm thickness is readily fabricated, and shows a dielectric constant higher than 30.

引用

页码：118 / +

页数：7

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