Growth of GaMnAs under near-stoichiometric conditions

被引：22

作者：

Avrutin, V

Humienik, D

Frank, S

Koeder, A

Schoch, W

Limmer, W

Sauer, R

Waag, A

机构：

[1] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany

[2] Tech Univ Braunschweig, Inst Halbleitertech, D-38103 Braunschweig, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 02期

关键词：

D O I：

10.1063/1.1991971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga0.96Mn0.04As grown by molecular-beam epitaxy. For all the substrate temperatures, the conductivities and Curie temperatures of the layers were found to increase as the V/III flux ratio approaches 1. A Curie temperature as high as 95 K was achieved for the Ga0.96Mn0.04As samples grown at 240 degrees C and a V/III ratio of about 1.5. The lattice parameter of Ga0.96Mn0.04As increased with decreasing V/III ratio and/or increasing growth temperature. Possible reasons for the effect of the V/III ratio on the magnetotransport properties and lattice parameter of GaMnAs are discussed. (c) 2005 American Institute of Physics.

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页数：4

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