Titanium nitride coating on implanted layer using titanium plasma based ion implantation

In Plasma Based Ion Implantation (PBII) using a titanium vacuum are of DC 70 A with a pulse voltage of -10 to -40 kV/20 mu s, titanium nitride (TiN) films were coated on a silicon substrate (p-type, (100)) and titanium ions were simultaneously implanted in the substrate. XPS results indicate that Ti ions are implanted inside the silicon substrate. From XRD patterns, the crystal orientation of the film prepared by PBII differs from that prepared using DC bias. A pulse voltage of -20 to -40 kV with a nitrogen pressure of 0.27 Pa forms a film of strongly (2 0 0) preferred orientation. while a DC bias of -500 V forms a film of (1 1 1) and (2 2 0) preferred orientation. The thickness of the implanted layer is independent of the tilt angle of the substrate, whereas the deposition thickness depends on the tilt angle. (C) 1999 Elsevier Science B.V. All rights reserved.